Survei Tingkat Kepercayaan Diri Dalam Permainan Futsal Peserta Ekstrakurikuler Siswi Di Sma Negeri 1 Pamanukan

ABSTRAK Tujuan penelitian ini adalah mengetahui hasil kepercayaan diri dalam permainan futsal siswi di SMA Negeri 1 Pamanukan. Subjek dalam penelitian ini adalah seluruh anggota ekstrakurikuler futsal putri di SMA Negeri 1 Pamanukan dengan jumlah responden 30 orang. Teknik pengumpulan data yang dilakukan dalam penelitian ini adalah penelitian deskriptif kuantitatif. Metode yang digunakan adalah survei, adapun teknik pengambilan data menggunakan angket, angket dalam penelitian ini berbentuk skala likert. Hasil penelitian tersebut diketahui Tingkat Kepercayaan Diri dalam Permainan Futsal Peserta Ekstrakurikuler Siswi yang menyatakan pada kategori “sangat baik”dengan persentase 10%, pada kategori “baik” dengan persentase 20%, pada kategori “cukup baik”dengan persentase 46,7%, pada kategori “kurang baik” dengan persentase 20%, dan pada kategori “sangat kurang baik”  dengan persentase 3,4%. Kata Kunci: Percaya Diri, Ekstrakurikuler, Futsal ABSTRACT The purpose of this study is to find out the results of confidence in the game of futsal students at SMA Negeri 1 Pamanukan.The subjects in this study were all extracurricular members of women's futsal at SMA Negeri 1 Pamanukan with a total of 30 respondents.The data collection techniques conducted in this study are quantitative descriptive research.The method used is survey, as for data retrieval techniques using questionnaires, the questionnaires in this study are in the form of likert scales.The results of the study were known confidence levels in futsal games extracurricular participants who stated in the category of "excellent"with a percentage of 10%, in the category of "good" with a percentage of 20%, in the category of "good enough"with a percentage of 46.7%, in the category of "less good" with a percentage of 20%, and in the category of "very poor" with a percentage of 3.4%.  Keywords : Self-Confidence, Extracurricular , Futsa

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

The transfer of chemical vapour deposited (CVD) graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to fully remove and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.We acknowledge funding from EPSRC (Grant No. EP/K016636/1, GRAPHTED) and ERC (Grant No. 279342, InsituNANO). ACV acknowledges the Conacyt Cambridge Scholarship and Roberto Rocca Fellowship. JAA-W acknowledges the support of his Research Fellowships from the Royal Commission for the Exhibition of 1851 and Churchill College, Cambridge. RSW acknowledges a Research Fellowship from St. John's College, Cambridge and a Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (no. 656870) from the European Union's Horizon 2020 research and innovation programme

Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices

Efficient injection of charge from metal electrodes into semiconductors is of paramount importance to obtain high performance optoelectronic devices. The quality of the interface between the electrode and the semiconductor must, therefore, be carefully controlled. The case of organic semiconductors presents specific problems: ambient deposition techniques, such as solution processing, restrict the choice of electrodes to those not prone to oxidation, limiting potential applications. Additionally, damage to the semiconductor in sputter coating or high temperature thermal evaporation poses an obstacle to the use of many device-relevant metals as top electrodes in vertical metal–semiconductor–metal structures, making it preferable to use them as bottom electrodes. Here, we propose a possible solution to these problems by implementing graphene-passivated nickel as an air stable bottom electrode in vertical devices comprising organic semiconductors. We use these passivated layers as hole-injecting bottom electrodes, and we show that efficient charge injection can be achieved into standard organic semiconducting polymers, owing to an oxide free nickel/graphene/polymer interface. Crucially, we fabricate our electrodes with low roughness, which, in turn, allows us to produce large area devices (of the order of millimeter squares) without electrical shorts occurring. Our results make these graphene-passivated ferromagnetic electrodes a promising approach for large area organic optoelectronic and spintronic devices.We acknowledge funding from EPSRC (EP/P005152/1, EP/M005143/1). R.M. and K.N. acknowledges funding from the EPSRC Cambridge NanoDTC (Grant No. EP/G037221/1). J.A.-W. acknowledges the support of his Research Fellowship from the Royal Commission for the Exhibition of 1851, and Royal Society Dorothy Hodgkin Research Fellowship. R. S. W. acknowledges support from a CAMS-UK fellowship

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

We demonstrate a simple, scalable approach to achieve encapsulated graphene transistors with negligible gate hysteresis, low doping levels and enhanced mobility compared to as-fabricated devices. We engineer the interface between graphene and atomic layer deposited (ALD) Al$_{2}$O$_{3}$ by tailoring the growth parameters to achieve effective device encapsulation whilst enabling the passivation of charge traps in the underlying gate dielectric. We relate the passivation of charge trap states in the vicinity of the graphene to conformal growth of ALD oxide governed by $\textit{in situ}$ gaseous H$_{2}$O pretreatments. We demonstrate the long term stability of such encapsulation techniques and the resulting insensitivity towards additional lithography steps to enable vertical device integration of graphene for multi-stacked electronics fabrication.This work was supported by the EPSRC (Grant Nos. EP/K016636/1, GRAPHTED and EP/L020963/1) and the ERC (Grant No. 279342, InsituNANO). JAA-W acknowledges a Research Fellowship from Churchill College, Cambridge. JS acknowledges support from NUDT. ZAVV acknowledges funding from ESPRC grant EP/L016087/1. ACV acknowledges the Conacyt Cambridge Scholarship and the Roberto Rocca Fellowship. RW acknowledges EPSRC Doctoral Training Award (EP/M506485/1)

Graphene-based nanolaminates as ultra-high permeation barriers

Permeation barrier films are critical to a wide range of applications. In particular, for organic electronics and photovoltaics not only ultra-low permeation values are required but also optical transparency. A laminate structure thereby allows synergistic effects between different materials. Here, we report on a combination of chemical vapor deposition (CVD) and atomic layer deposition (ALD) to create in scalable fashion few-layer graphene/aluminium oxide-based nanolaminates. The resulting ~10 nm contiguous, flexible graphene-based films are >90% optically transparent and show water vapor transmission rates below 7 × 10¯³g/m²/day measured over areas of 5 × 5 cm². We deploy these films to provide effective encapsulation for organic light-emitting diodes (OLEDs) with measured half-life times of 880 h in ambient.We acknowledge funding via EPSRC-Innovate UK Grant (EP/M507751/1). B.C.B acknowledges funding from the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreements 656214- 2DInterFOX. J.C.M. acknowledges support from the Austrian Science Fund (FWF, P25721-N20)

Bolometric detection of terahertz quantum cascade laser radiation with graphene-plasmonic antenna arrays

We present a fast room temperature terahertz detector based on graphene loaded plasmonic antenna arrays. The antenna elements, which are arranged in series and are shorted by graphene, are contacting source and drain metallic pads, thus providing both the optical resonant element and the electrodes. The distance between the antenna's arms of approximately 300 nm allows a strong field enhancement in the graphene region, when the incident radiation is resonant with the antennas. The current passing through the source and drain is dependent on the graphene's conductivity, which is modified by the power impinging onto the detector as well as from the biasing back-gate voltage. The incident radiation power is thus translated into a current modification, with the main detection mechanism being attributed to the bolometric effect. The device has been characterized and tested with two bound to continuum terahertz quantum cascade lasers emitting at a single frequency around 2 THz and 2.7 THz yielding a maximum responsivity of ~2 mA W$^{−1}$.RD, HEB and DAR acknowledge financial support from the Engineering and Physical Sciences Research Council (Grant No. EP/J017671/1, Coherent Terahertz Systems). SH acknowledges funding from EPSRC (Grant No. EP/K016636/1, GRAPHTED). KN acknowledges the University of Cambridge Nanoscience Doctoral Training Centre (EPSRC EP/G037221/1) for financial support

Effect of allergen-specific immunotherapy with purified Alt a1 on AMP responsiveness, exhaled nitric oxide and exhaled breath condensate pH: a randomized double blind study

<p>Abstract</p> <p>Background</p> <p>Little information is available on the effect of allergen-specific immunotherapy on airway responsiveness and markers in exhaled air. The aims of this study were to assess the safety of immunotherapy with purified natural Alt a1 and its effect on airway responsiveness to direct and indirect bronchoconstrictor agents and markers in exhaled air.</p> <p>Methods</p> <p>This was a randomized double-blind trial. Subjects with allergic rhinitis with or without mild/moderate asthma sensitized to <it>A alternata </it>and who also had a positive skin prick test to Alt a1 were randomized to treatment with placebo (n = 18) or purified natural Alt a1 (n = 22) subcutaneously for 12 months. Bronchial responsiveness to adenosine 5'-monophosphate (AMP) and methacholine, exhaled nitric oxide (ENO), exhaled breath condensate (EBC) pH, and serum Alt a1-specific IgG₄antibodies were measured at baseline and after 6 and 12 months of treatment. Local and systemic adverse events were also registered.</p> <p>Results</p> <p>The mean (95% CI) allergen-specific IgG₄value for the active treatment group increased from 0.07 μg/mL (0.03-0.11) at baseline to 1.21 μg/mL (0.69-1.73, P < 0.001) at 6 months and to 1.62 μg/mL (1.02-2.22, P < 0.001) at 12 months of treatment. In the placebo group, IgG₄value increased nonsignificantly from 0.09 μg/mL (0.06-0.12) at baseline to 0.13 μg/mL (0.07-0.18) at 6 months and to 0.11 μg/mL (0.07-0.15) at 12 months of treatment. Changes in the active treatment group were significantly higher than in the placebo group both at 6 months (P < 0.001) and at 12 months of treatment (P < 0.0001). However, changes in AMP and methacholine responsiveness, ENO and EBC pH levels were not significantly different between treatment groups. The overall incidence of adverse events was comparable between the treatment groups.</p> <p>Conclusion</p> <p>Although allergen-specific immunotherapy with purified natural Alt a1 is well tolerated and induces an allergen-specific IgG₄response, treatment is not associated with changes in AMP or methacholine responsiveness or with significant improvements in markers of inflammation in exhaled air. These findings suggest dissociation between the immunotherapy-induced increase in IgG₄levels and its effect on airway responsiveness and inflammation.</p

A high-order FEM formulation for free and forced vibration analysis of a nonlocal nonlinear graded Timoshenko nanobeam based on the weak form quadrature element method

The purpose of this paper is to provide a high-order finite element method (FEM) formulation of nonlocal nonlinear nonlocal graded Timoshenko based on the weak form quadrature element method (WQEM). This formulation offers the advantages and flexibility of the FEM without its limiting low-order accuracy. The nanobeam theory accounts for the von Kármán geometric nonlinearity in addition to Eringen’s nonlocal constitutive models. For the sake of generality, a nonlinear foundation is included in the formulation. The proposed formulation generates high-order derivative terms that cannot be accounted for using regular first- or second-order interpolation functions. Hamilton’s principle is used to derive the variational statement which is discretized using WQEM. The results of a WQEM free vibration study are assessed using data obtained from a similar problem solved by the differential quadrature method (DQM). The study shows that WQEM can offer the same accuracy as DQM with a reduced computational cost. Currently the literature describes a small number of high-order numerical forced vibration problems, the majority of which are limited to DQM. To obtain forced vibration solutions using WQEM, the authors propose two different methods to obtain frequency response curves. The obtained results indicate that the frequency response curves generated by either method closely match their DQM counterparts obtained from the literature, and this is despite the low mesh density used for the WQEM systems